Modeling and simulation of the diffusive transport in a nano-scale Double-Gate MOSFET
by P.Pietra and
N.Vauchelet
J. Comput Elec. 7 (2008), 56-65.
ABSTRACT
In this work we present the modeling and the simulation of the
diffusive transport of an electron gas confined in a nanostructure.
A general subband decomposition approach is used, consisting
of a diagonalization of the Hamiltonian on slices perpendicular to the
transport direction.
A self-consistent process between the calculation of the electron
density and the space charge effects using the Poisson equation is defined.
The subband model describes the system as a statistical mixture of
eigenstates of the Schroedinger operator in the confined direction.
The elementary states are obtained thanks to the resolution of a classical transport equation.
Thanks to a separation of the confined and the transport directions, the computational gain is
significant by the reduction of the dimension of the transport problem.
Simulations of
transport in a nanoscale Double-Gate MOSFET are presented.
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