Finite element and finite volume discretizations of Drift-Diffusion
type fluid models for semiconductors
by F.Brezzi, L.D.Marini, S. Micheletti, P.Pietra, R. Sacco, and S. Wang
ABSTRACT
This paper contains an overview on numerical schemes for some of the
most widely used fluid models for semiconductor device simulation, namely,
Drift-Diffusion model, Energy-Transport and Energy-Balance models. The presentation
focuses on the use of finite elements and finite volumes for formulations
in density variables.
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