A Mixed Finite-Element Discretization of the
Energy-Transport Model for Semiconductors
by Stefan Holst, Ansgar Jüngel and Paola Pietra
ABSTRACT
Energy-transport models describe the flow of electrons through a
semiconductor device, influenced by diffusive, electrical, and thermal
effects. They consist of the continuity equations for the mass and energy,
coupled with Poisson's equation for the electrostatic potential.
The energy-transport model can be written in a drift-diffusion formulation
which is used for the numerical approximation.
The stationary equations are discretized with an exponential fitting
mixed finite-element method in two space dimensions. Numerical simulations
of a ballistic diode are performed and numerical convergence rates are
computed. Furthermore, a two-dimensional MESFET device
with parabolic band structure is simulated.
Download Postscript file.
Download pdf file.
Back to publication list